2012/01/31 ver.2 page 1 SPN3400W n-channel enhancement mode mosfet description applications the SPN3400W is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. ? power management in note book ? portable equipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter features pin configuration(sot-23-3l) part marking ? 30v/5.4a,r ds(on) = 38m ? @v gs =10v ? 30v/4.6a,r ds(on) = 42m ? @v gs =4.5v ? 30v/3.8a,r ds(on) = 55m ? @v gs =2.5v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design
2012/01/31 ver.2 page 2 SPN3400W n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN3400Ws23rg sot-23-3l a0wyw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN3400Ws23rg : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 30 v gate ?source voltage v gss 12 v t a =25 4.5 continuous drain current(t j =150 ) t a =70 i d 3.5 a pulsed drain current i dm 25 a continuous source current(diode conduction) i s 1.7 a t a =25 2.0 power dissipation t a =70 p d 1.3 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 90 /w
2012/01/31 ver.2 page 3 SPN3400W n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.8 1.6 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =24v,v gs =1.0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0.0v t j =55 10 ua on-state drain current i d(on) v ds R 4.5v,v gs =4.5v 10 a v gs = 10v,i d =5.4a 0.030 0.038 v gs =4.5v,i d =4.6a 0.034 0.042 drain-source on-resistance r ds(on) v gs =2.5v,i d =3.8a 0.040 0.055 ? forward transconductance gfs v ds =4.5v,i d =5.4a 12 s diode forward voltage v sd i s =1.7a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 10 18 gate-source charge q gs 1.6 gate-drain charge q gd v ds =15v gs =10v i d 6.7a 3.2 nc input capacitance c iss 450 output capacitance c oss 240 reverse transfer capacitance c rss v ds =15v gs =0v f=1mhz 38 pf t d(on) 7 15 turn-on time t r 10 20 t d(off) 20 40 turn-off time t f v dd =15r l =15 i d 1.0a,v gen =10 r g =6 ? 11 20 ns
2012/01/31 ver.2 page 4 SPN3400W n-channel enhancement mode mosfet typical characteristics
2012/01/31 ver.2 page 5 SPN3400W n-channel enhancement mode mosfet typical characteristics
2012/01/31 ver.2 page 6 SPN3400W n-channel enhancement mode mosfet typical characteristics
2012/01/31 ver.2 page 7 SPN3400W n-channel enhancement mode mosfet sot-23-3l package outline
2012/01/31 ver.2 page 8 SPN3400W n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan, 115, r.o.c phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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